دانلود رایگان مقاله لاتین پرتو ژرمانیوم از سایت الزویر
عنوان فارسی مقاله:
ژرمانیوم نیترید و فیلم نیتریت سطح غیرفعال آشکارسازهای پرتو ژرمانیوم
عنوان انگلیسی مقاله:
Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors
سال انتشار : 2017
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مقدمه انگلیسی مقاله:
1. Introduction
Germanium (Ge) has recently aroused renewed interest in microelectronics owing to its higher hole and electron mobilities as compared to silicon (Si) [1], while its high absorption coefficient in optical communication bands makes it a good candidate for the development of Ge optical devices [2]. One of the most serious issues in the fabrication of Ge devices concerns the passivation of Ge surfaces. Differently from Si, Ge forms unstable oxides: GeO2 is water-soluble and decomposes under thermal treatment around 420 ◦C [3] so that it cannot be used in wet processes and thermal treatments in ULSI fabrication processes [4]. For this reason, alternative passivation coatings have been studied and developed and several Ge-based dielectric compounds (such as Ge nitrides and oxynitrides) are now considered potentially interesting for technological applications. In particular, germanium nitride (Ge3N4) exhibits a high dielectric constant, is water-insoluble and its thermal decomposition temperature is higher than GeO2 [5,6] so that it could be applied not only as a buffer layer for high-k dielectrics grown on Ge substrates but also for the passivation of Ge surfaces. Germanium oxynitrides (GeOxNy) are also promising materials, because nitrogen incorporation in GeO2 has proven to improve its chemical and thermal stability [7]: the decomposition temperature of a GeOxNy layer was found to increase up to 550 ◦C, which was more than 100 ◦C higher than that of pure GeO2 [8,9]. A key role to tailor the passivating properties of this class of materials is played by the deposition technique. Germanium nitride and oxynitride layers are usually grown by techniques such as thermal and plasma nitridation of Ge surfaces [4,3,10], chemical vapor deposition [11] and thermal ammonolysis of GeO2 [12,13]. Reactive sputtering technique, using N2, NH3 or N2H4 as reactive gas, has been also exploited for the deposition of germanium nitride layers [14–18]. These techniques usually require heating the substrate up to some hundreds of Celsius degrees during the film growth in order
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کلمات کلیدی:
Handbook of Chalcogen Chemistry: New Perspectives in Sulfur, ... https://books.google.com/books?isbn=1849736243 Francesco A. Devillanova, Woolf-Walther Du Mont - 2013 - Science Since semiconductor radiation detectors have a high spectrometric ... Si and Ge are traditional semiconductors used for radiation detectors that offer good ... with a high-resistivity passivation film to avoid excessive surface leakage currents and ... [PDF]Study of surface passivations on HPGe detectors www.infn.it/thesis/PDF/getfile.php?filename=10680-Riccetto-specialistica.pdf 1.8 Examples of radiation interactions inside the detector. . . . . . . . . 23 ... (on the left); the passivated surface study, putting the low-energy radiation ... the surface giving rise to the formation of dead layers below the Ge surface, that can have ... [PDF]Fabrication Process Development for High - University of California ... digitalassets.lib.berkeley.edu/etd/ucb/text/Looker_berkeley_0028E_14136.pdf by Q Looker - 2014 - Cited by 3 - Related articles High-purity germanium (HPGe) radiation detectors are well established as a ... is needed, especially in developing electrical contact and surface passivation ... Ge) and amorphous silicon (a-Si) contacts are sputtered with varying sputter gas ... Experimental Techniques in Nuclear Physics https://books.google.com/books?isbn=3110809826 Dorin N. Poenaru, Walter Greiner - 1997 - Science ... limit for a convenient behaviour of both HP-Ge and Ge(Li) detectors has been shown to ... Silicon detectors A. Silicon surface barriers and p—n Junctions The surface ... which can be built to make a silicon-based nuclear radiation detector. ... Si have been investigated: surface passivation [90], or use of other metals [91]. Technology of Si, Ge, and SiC / Technologie Von Si, Ge und SiC https://books.google.com/books?isbn=3540114742 W. Dietze, E. Doering, M. Schulz - 1983 - Science Detector structures and fabrication The structure of radiation detectors can have the ... The junction is formed by a thin heavily doped surface layer or by forming a ... planar process (oxide passivation, photo engraving) (section 6.1.4.0.3). Wet chemical treatments of high purity Ge crystals..|INIS - IAEA https://inis.iaea.org/search/search.aspx?orig_q=RN:47044481 by S Carturan - 2015 - Cited by 3 - Related articles Aiming at the production of HPGe diodes for γ-ray detection, surface passivation of the pristine Germanium surface is pursued by treatment of freshly etched, ...
